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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1
N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET
PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1
s s s
VDSS 55 V 55 V 55 V
RDS(on) 0.008 0.008 0.008
ID 80 A 80 A 80 A
3
3 1 2
TYPICAL RDS(on) = 0.0065 LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
1
TO-220
D2PAK
3 12
I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT SWITCHING APPLICATION
INTERNAL SCHEMATIC DIAGRAM
s
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (1) ID (1) IDM ( ) PTOT dv/dt (2) EAS(3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 16 80 80 320 300 2 15 870 -55 to 175 175
(1) Current Limited by Package (2) ISD 80A, di/dt 500A/s, VDD= 40V Tj TJMAX. (3) Starting Tj= 25C, ID= 40A, VDD= 40V
Unit V V V A A A W W/C V/ns mJ C C
( ) Pulse width limited by safe operating area
March 2004
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 Min. 55 1 10 100 Typ. Max. Unit V A A nA
VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, TC = 125 C Gate-body Leakage Current (VDS = 0) VGS = 16V
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A Min. 1 Typ. 1.6 0.0065 0.008 Max. 2.5 0.008 0.01 Unit V
DYNAMIC
Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15V , ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 4350 800 260 Max. Unit S pF pF pF
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 27V, ID = 40A RG = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD = 27.5 V, ID = 80A, VGS = 4.5V Min. Typ. 35 145 75 20 30 100 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 27V, ID = 40A, RG = 4.7, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 85 65 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/s, VDD = 20V, Tj = 150C (see test circuit, Figure 5) 85 280 6.5 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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1
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W
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BASE QTY 1000
mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
* on sales type
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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